
Selected Publications
The Relation between Chemical Bonding and Ultrafast Crystal Growth.
(DOI: 10.1002/adma.201700814)
Microscopic Mechanism of Doping-Induced Kinetically Constrained Crystallization in Phase-Change Materials.
(DOI: 10.1002/adma.201502295)
Tailoring transient-amorphous states: towards fast and power-efficient phase-change memory and neuromorphic computing.
(DOI: 10.1002/adma.201402696)
Breaking the Speed Limits of Phase-Change Memory
(DOI: 10.1126/science.1221561)
Ab Initio Computer Simulation of the Early Stages of Crystallization: Application to Ge2Sb2Te5 Phase-Change Materials
Structural role of vacancies in the phase transition of Ge 2Sb2Te5 memory materials
(DOI: 10.1103/physrevb.84.094124)
Evidence of formation of tightly bound rare-earth clusters in chalcogenide glasses and their evolution with glass composition
(DOI: 10.1103/physrevb.79.180202)
Spatial distribution of rare-earth ions and GaS4 tetrahedra in chalcogenide glasses studied via laser spectroscopy and ab initio molecular dynamics simulation
(DOI: 10.1103/PhysRevB.81.104204)
Publications
Ultrafast phase-change logic device driven by melting processes
– Proc Natl Acad Sci U S A
(2014)
111,
13272
(doi: 10.1073/pnas.1407633111)
Ion-implantation-enhanced chalcogenide-glass resistive-switching devices
– Applied Physics Letters
(2014)
105,
083506
(doi: 10.1063/1.4894245)
Optical and electronic properties of bismuth-implanted glasses
– Proceedings of SPIE--the International Society for Optical Engineering
(2014)
8982,
898216-898216-8
(doi: 10.1117/12.2036933)
Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation
– Proceedings of SPIE - The International Society for Optical Engineering
(2014)
8982,
898213-898213-7
(doi: 10.1117/12.2037965)
Nanoscale chalcogenides: New clathrate-based materials and guest-cage atomic interactions
– ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY
(2014)
248,
Guest-cage atomic interactions in a clathrate-based phase-change material
– Advanced materials (Deerfield Beach, Fla.)
(2013)
26,
1725
(doi: 10.1002/adma.201304199)
Preferred orientation of nanoscale order at the surface of amorphous Ge2Sb2Te5 films
– Applied Physics Letters
(2013)
103,
201907
(doi: 10.1063/1.4831973)
On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glasses
– Optics express
(2013)
21,
8101
(doi: 10.1364/oe.21.008101)
Structural insights into the formation and evolution of amorphous phase‐change materials
– physica status solidi (b)
(2013)
250,
968
(doi: 10.1002/pssb.201248563)
Understanding the multistate SET process in Ge-Sb-Te-based phase-change memory
– Journal of Applied Physics
(2012)
112,
064901
(doi: 10.1063/1.4748961)
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