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The Elliott Group

Dr Tae Hoon Lee

Selected Publications 

The Relation between Chemical Bonding and Ultrafast Crystal Growth.
T Lee, SR Elliott – Advanced Materials (2017) 29, 1700814
Microscopic Mechanism of Doping‐Induced Kinetically Constrained Crystallization in Phase‐Change Materials
TH Lee, D Loke, SR Elliott – Advanced materials (Deerfield Beach, Fla.) (2015) 27, 5477
Tailoring transient-amorphous states: Towards fast and power-efficient phase-change memory and neuromorphic computing
TH Lee, D Loke, K-J Huang, W-J Wang, SR Elliott – Advanced materials (Deerfield Beach, Fla.) (2014) 26, 7493
Breaking the speed limits of phase-change memory.
D Loke, TH Lee, WJ Wang, LP Shi, R Zhao, YC Yeo, TC Chong, SR Elliott – Science (New York, N.Y.) (2012) 336, 1566
Ab Initio Computer Simulation of the Early Stages of Crystallization: Application to Ge2Sb2Te5 Phase-Change Materials
TH Lee, SR Elliott – Phys Rev Lett (2011) 107, 145702
Structural role of vacancies in the phase transition of Ge 2Sb2Te5 memory materials
TH Lee, SR Elliott – Physical Review B (2011) 84, 094124
Evidence of formation of tightly bound rare-earth clusters in chalcogenide glasses and their evolution with glass composition
TH Lee, SI Simdyankin, L Su, SR Elliott – Physical Review B - Condensed Matter and Materials Physics (2009) 79, 180202
Spatial distribution of rare-earth ions andGaS4tetrahedra in chalcogenide glasses studied via laser spectroscopy andab initiomolecular dynamics simulation
TH Lee, SI Simdyankin, J Hegedus, J Heo, SR Elliott – Physical Review B (2010) 81, 104204

Publications

Ultrafast phase-change logic device driven by melting processes
D Loke, JM Skelton, W-J Wang, T-H Lee, R Zhao, T-C Chong, SR Elliott
– Proceedings of the National Academy of Sciences
(2014)
111,
13272
(doi: 10.1073/pnas.1407633111)
Ion-implantation-enhanced chalcogenide-glass resistive-switching devices
MA Hughes, Y Fedorenko, RM Gwilliam, KP Homewood, S Hinder, B Gholipour, DW Hewak, TH Lee, SR Elliott, RJ Curry
– Applied Physics Letters
(2014)
105,
083506
(doi: 10.1063/1.4894245)
Optical and electronic properties of bismuth-implanted glasses
MA Hughes, Y Federenko, TH Lee, J Yao, B Gholipour, RM Gwilliam, KP Homewood, DW Hewak, SR Elliott, RJ Curry
– SPIE Proceedings
(2014)
8982,
898216-898216-8
(doi: 10.1117/12.2036933)
Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation
YG Fedorenko, MA Hughes, JL Colaux, C Jeynes, RM Gwilliam, KP Homewood, J Yao, DW Hewak, TH Lee, SR Elliott, B Gholipour, RJ Curry
– SPIE Proceedings
(2014)
8982,
898213-898213-7
(doi: 10.1117/12.2037965)
Nanoscale chalcogenides: New clathrate-based materials and guest-cage atomic interactions
D Loke, JM Skelton, L-T Law, W-J Wang, M-H Li, W-D Song, T-H Lee, SR Elliott
– ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY
(2014)
248,
(link to publication)
Guest-cage atomic interactions in a clathrate-based phase-change material.
D Loke, JM Skelton, L-T Law, W-J Wang, M-H Li, W-D Song, T-H Lee, SR Elliott
– Advanced Materials
(2013)
26,
1725
(doi: 10.1002/adma.201304199)
Preferred orientation of nanoscale order at the surface of amorphous Ge2Sb2Te5 films
T Tony Li, T Hoon Lee, SR Elliott, JR Abelson
– Applied Physics Letters
(2013)
103,
201907
(doi: 10.1063/1.4831973)
On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glasses
MA Hughes, RM Gwilliam, K Homewood, B Gholipour, DW Hewak, T-H Lee, SR Elliott, T Suzuki, Y Ohishi, T Kohoutek, RJ Curry
– Optics Express
(2013)
21,
8101
(doi: 10.1364/oe.21.008101)
Structural insights into the formation and evolution of amorphous phase-change materials
JM Skelton, D Loke, TH Lee, SR Elliott
– physica status solidi (b)
(2013)
250,
968
(doi: 10.1002/pssb.201248563)
Understanding the multistate SET process in Ge-Sb-Te-based phase-change memory
JM Skelton, D Loke, TH Lee, SR Elliott
– Journal of Applied Physics
(2012)
112,
064901
(doi: 10.1063/1.4748961)
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Telephone number

01223 336532 (shared)

Research Interests

Study at Cambridge

About the University

Research at Cambridge