Selected Publications
The Relation between Chemical Bonding and Ultrafast Crystal Growth
(DOI: 10.1002/adma.201700814)
Microscopic Mechanism of Doping-Induced Kinetically Constrained Crystallization in Phase-Change Materials.
(DOI: 10.1002/adma.201502295)
Tailoring transient-amorphous states: Towards fast and power-efficient phase-change memory and neuromorphic computing
(DOI: 10.1002/adma.201402696)
Breaking the speed limits of phase-change memory
(DOI: 10.1126/science.1221561)
Ab Initio computer simulation of the early stages of crystallization: application to Ge(2)Sb(2)Te(5) phase-change materials.
Structural role of vacancies in the phase transition of Ge 2Sb2Te5 memory materials
(DOI: 10.1103/PhysRevB.84.094124)
Evidence of formation of tightly bound rare-earth clusters in chalcogenide glasses and their evolution with glass composition
(DOI: 10.1103/physrevb.79.180202)
Spatial distribution of rare-earth ions and GaS4 tetrahedra in chalcogenide glasses studied via laser spectroscopy and ab initio molecular dynamics simulation
(DOI: 10.1103/physrevb.81.104204)
Publications
Modeling the Phase-Change Memory Material, Ge2Sb2Te5, with a Machine-Learned Interatomic Potential.
– The Journal of Physical Chemistry Part B
(2018)
122,
8998
(doi: 10.1021/acs.jpcb.8b06476)
Gaussian approximation potential modeling of lithium intercalation in carbon nanostructures
– J Chem Phys
(2018)
148,
241714
(doi: 10.1063/1.5016317)
Origin of radiation tolerance in amorphous Ge2Sb2Te5 phase-change random-access memory material.
– Proceedings of the National Academy of Sciences of the United States of America
(2018)
115,
5353
(doi: 10.1073/pnas.1800638115)
Towards an atomistic understanding of disordered carbon electrode materials
– Chemical communications (Cambridge, England)
(2018)
54,
5988
(doi: 10.1039/c8cc01388h)
The Relation between Chemical Bonding and Ultrafast Crystal Growth
– Advanced materials (Deerfield Beach, Fla.)
(2017)
29,
1700814
(doi: 10.1002/adma.201700814)
Microscopic Mechanism of Doping-Induced Kinetically Constrained Crystallization in Phase-Change Materials.
– Advanced Materials
(2015)
27,
5477
(doi: 10.1002/adma.201502295)
Ab initio molecular-dynamics simulations of doped phase-change materials
– Springer Series in Materials Science
(2015)
215,
441
(doi: 10.1007/978-3-319-15675-0_16)
n-type chalcogenides by ion implantation
– Nature Communications
(2014)
5,
5346
(doi: 10.1038/ncomms6346)
Tailoring transient-amorphous states: Towards fast and power-efficient phase-change memory and neuromorphic computing
– Advanced Materials
(2014)
26,
7493
(doi: 10.1002/adma.201402696)
Atomistic Origin of the Enhanced Crystallization Speed and n‐Type Conductivity in Bi‐doped Ge‐Sb‐Te Phase‐Change Materials
– Advanced Functional Materials
(2014)
24,
7291
(doi: 10.1002/adfm.201401202)
- 1 of 3