Selected Publications
The Relation between Chemical Bonding and Ultrafast Crystal Growth
(DOI: 10.1002/adma.201700814)
Microscopic Mechanism of Doping-Induced Kinetically Constrained Crystallization in Phase-Change Materials
(DOI: 10.1002/adma.201502295)
Tailoring transient-amorphous states: towards fast and power-efficient phase-change memory and neuromorphic computing.
(DOI: 10.1002/adma.201402696)
Breaking the Speed Limits of Phase-Change Memory
(DOI: 10.1126/science.1221561)
Ab InitioComputer Simulation of the Early Stages of Crystallization: Application toGe2Sb2Te5Phase-Change Materials
Structural role of vacancies in the phase transition of Ge 2Sb2Te5 memory materials
(DOI: 10.1103/PhysRevB.84.094124)
Evidence of formation of tightly bound rare-earth clusters in chalcogenide glasses and their evolution with glass composition
(DOI: 10.1103/PhysRevB.79.180202)
Spatial distribution of rare-earth ions and GaS4 tetrahedra in chalcogenide glasses studied via laser spectroscopy and ab initio molecular dynamics simulation
(DOI: 10.1103/physrevb.81.104204)
Publications
Modeling the Phase-Change Memory Material, Ge2Sb2Te5, with a Machine-Learned Interatomic Potential.
– The journal of physical chemistry. B
(2018)
122,
8998
(doi: 10.1021/acs.jpcb.8b06476)
Gaussian approximation potential modeling of lithium intercalation in carbon nanostructures
– Journal of Chemical Physics
(2018)
148,
241714
(doi: 10.1063/1.5016317)
Origin of radiation tolerance in amorphous Ge2Sb2Te5 phase-change random-access memory material
– Proc Natl Acad Sci U S A
(2018)
115,
5353
(doi: 10.1073/pnas.1800638115)
Towards an atomistic understanding of disordered carbon electrode materials
– Chemical communications (Cambridge, England)
(2018)
54,
5988
(doi: 10.1039/c8cc01388h)
The Relation between Chemical Bonding and Ultrafast Crystal Growth
– Advanced Materials
(2017)
29,
1700814
(doi: 10.1002/adma.201700814)
Microscopic Mechanism of Doping-Induced Kinetically Constrained Crystallization in Phase-Change Materials
– Adv Mater
(2015)
27,
5477
(doi: 10.1002/adma.201502295)
Ab Initio Molecular-Dynamics Simulations of Doped Phase-Change Materials
– Springer Series in Materials Science
(2015)
215,
441
(doi: 10.1007/978-3-319-15675-0_16)
n-type chalcogenides by ion implantation.
– Nature Communications
(2014)
5,
5346
(doi: 10.1038/ncomms6346)
Tailoring transient-amorphous states: towards fast and power-efficient phase-change memory and neuromorphic computing.
– Advanced materials (Deerfield Beach, Fla.)
(2014)
26,
7493
(doi: 10.1002/adma.201402696)
Atomistic origin of the enhanced crystallization speed and n-type conductivity in Bi-doped Ge-Sb-Te phase-change materials
– Advanced Functional Materials
(2014)
24,
7291
(doi: 10.1002/adfm.201401202)
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